n aina s emiconductor l td . 1 n 1183 thru 1n1186r 1 d - 95 , sector 63, noida C 201301, india ? tel: 0120 - 4205450 ? fax: 0120 - 4273653 sales@nainasemi.com ? www.nainasemi.com standard recovery diode , 35 a features ? glass passivated die ? low forward voltage drop ? high surge capability ? low leakage current ? normal and reverse polarity ? metric and unf threads available maximum ratings (t j = 25 o c, unless otherwise noted) parameter test conditions symbol 1n 1183 (r) 1n 1184 ( r) 1n 1185 (r) 1n 1186 (r) units repetitive peak reverse voltage v rrm 5 0 1 00 15 0 2 00 v rms reverse voltage v rms 35 7 0 10 5 14 0 v dc blocking voltage v dc 5 0 10 0 150 2 00 v continuous forward current t c 1 4 0 o c i f (av) 3 5 3 5 3 5 3 5 a surge non - repetitive forward current, half - sine wave t c = 25 o c i fsm 5 95 5 9 5 5 95 5 95 a maximum peak f orward voltage i f = 35 a, t j = 25 o c v f 1. 2 1. 2 1. 2 1. 2 v reverse current t j = 25 o c i r 10 10 10 10 a t j = 1 40 o c 1 0 1 0 1 0 10 ma thermal & mechanical specifications (t j = 25 o c, unless otherwise noted) parameters symbol 1N1183 (r) 1n 1184 (r) 1n 1185 (r) 1n1186 (r) units t hermal resistance, junction to case r th(jc) 0. 25 0. 25 0. 25 0. 25 o c/w operating junction temperature range t j - 5 5 to 16 0 - 55 to 160 - 55 to 160 - 55 to 160 o c storage temperature t stg - 5 5 to 160 - 55 to 160 - 55 to 160 - 55 to 1 60 o c mounting torque, non - lubricated threads, tighting on nut f 3.4 10% nm approximate weight w 16 g do - 203ab (do - 5 )
n aina s emiconductor l td . 1 n 1183 thru 1n1186r 2 d - 95 , sector 63, noida C 201301, india ? tel: 0120 - 4205450 ? fax: 0120 - 4273653 sales@nainasemi.com ? www.nainasemi.com package outline dimensions for do - 203ab (do - 5) (in millimeters)
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